In addition, the solar cell characteristics were simulated by the

In addition, the solar cell characteristics were simulated by the BQP method. The absorption edge of the simulated Si-QDSL solar cell was in agreement with that of the fabricated one. Moreover, the absorption edge of the Si-QDSL solar cell was 1.49 eV, which is similar to the absorption edge estimated from the optical measurements. These results suggest

that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of a crystalline silicon. Acknowledgements This work was supported in part by the New Energy and Industrial Technology Development Organization SYN-117 chemical structure (NEDO) under the Ministry of Economy Trade and Industry of Japan. References 1. Yamada S, Kurokawa Y, Miyajima S, Yamada A, Konagai M: High open-circuit voltage oxygen-containing Si quantum dots superlattice solar cells. In Proceedings of the 35th IEEE Photovoltaic Specialists Conference. Honolulu; 2010:766.

2. Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M: Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice. Jpn J Appl Phys Part 2 2007, 46:L833.CrossRef 3. Kurokawa Y, Tomita S, Miyajima mTOR target S, Yamada A, Konagai M: Observation of the photovoltaic effect from the solar cells using Si quantum dots superlattice as a light absorption layer. In Proceedings of the 33rd IEEE Photovoltaic Specialists ADP ribosylation factor Conference. San Diego; 2008:211. 4. Perez-Wurfl I, Hao XJ, Gentle A, Kim DH, Conibeer G, Green MA: Si nanocrystal p-i-n diodes

fabricated on quartz substrates for third generation solar cell applications. Appl Phys Lett 2009, 95:153506.CrossRef 5. Tian BZ, Zheng XL, Kempa TJ, Fang Y, Yu NF, Yu GH, Huang JL, Lieber CM: Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 2007, 449:885.CrossRef 6. Tsakalakos L, Balch J, Fronheiser J, Korevaar BA, Sulima O, Rand J: Silicon nanowire solar cells. Appl Phys Lett 2007, 91:233117.CrossRef 7. Sivakov V, Andrä G, Gawlik A, Berger A, Plentz J, Falk F, Christiansen SH: Silicon nanowire-based solar cells on glass: synthesis, optical properties, and cell parameters. Nano Lett 2009, 9:1549.CrossRef 8. Jeon M, Kamisako K: Synthesis and characterization of silicon nanowires using tin catalyst for solar cells application. Mater Lett 2009, 63:777.CrossRef 9. Cnibeer G, Green M, Corkish R, Cho Y, Cho E-C, Jiang C-W, Fangsuwannarak T, Pink E, Huang Y, Puzzer T, Trupke T, Richards B, Shalav A, Lin K-I: Silicon nanostructures for third generation photovoltaic solar cells. Thin Solid Films 2006, 511–512:654.CrossRef 10. Shockley W, Queisser HJ: Detailed balance limit of efficiency of p-n junction solar cells. J Appl Phys 1961, 32:510.CrossRef 11.

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