Microelect Reliab 2010, 50:670–673.CrossRef 6. Mondal S, Chen HY, Her JL, Ko FH, Pan TM: Effect of Ti doping concentration on resistive switching behaviors of Yb 2 O JQEZ5 3 memory cell. Appl Phys Lett 2012, 101:083506.CrossRef 7. Huang SY, Chang TC, Chen MC, Chen SC, Lo HP, Huang HC, Gan DS, Sze SM, Tsai MJ: Resistive switching characteristics of Sm 2 O 3 thin films for nonvolatile memory applications. Solid State Electron 2011, 63:189–191.CrossRef 8. Pan TM, Lu CH: Switching behavior in rare-earth films fabricated in full room temperature. IEEE Trans Electron Devices 2012, 59:956–961.CrossRef 9. Li JGT, Wang Y, Mori
T: GDC-973 Reactive ceria nanopowders via carbonate precipitation. J Am Ceram Soc 2002, 85:2376–2378.CrossRef 10. Zhou Q, Zhai J: Study of the resistive switching characteristics and mechanisms of Pt/CeO x /TiN structure for RRAM applications. Integr Ferroelectr 2012, 140:16–22.CrossRef 11.
Panda D, Dhar A, Ray SK: Non-volatile memristive switching characteristics of TiO 2 films embedded with nickel nanocrystals. IEEE Trans Nanotechnol 2012, 11:51–55.CrossRef 12. Waser R, Aono M: Nanoionics-based resistive switching memories. Nat Mater 2007, 6:833–840.CrossRef 13. Panda D, Huang CY, Tseng TY: Resistive switching characteristics of nickel silicide layer embedded HfO 2 film. Appl Phys Lett 2012, 100:112901.CrossRef 14. Kano S, Dou C, Hadi MS, Kakushima K, Ahmet P, Nishiyama A, Suggi N, Tsutsui K, Kattaoka Y, Nabilone Natori K, Miranda E, Hattori T, Iwai H: Influence of electrode selleck inhibitor materials on CeO x based resistive switching. ECS Trans 2012, 44:439–443.CrossRef 15. Rao RG, Kaspar J, Meriani
S, Monte R, Graziani M: NO decomposition over partially reduced metallized CeO 2 -ZrO 2 solid solutions. Catal Lett 1994, 24:107–112.CrossRef 16. Bêche E, Charvin P, Perarnau D, Abanades S, Flamant G: Ce 3d XPS investigation of cerium oxides and mixed cerium oxide (Ce x Ti y O z ). Surf Inter Anal 2008, 40:264–267.CrossRef 17. Dittmar A, Hoang DL, Martin A: TPR and XPS characterization of chromia–lanthana–zirconia catalyst prepared by impregnation and microwave plasma enhanced chemical vapour deposition methods. Thermochim Acta 2008, 47:40–46.CrossRef 18. Meng F, Zhang C, Bo Q, Zhang Q: Hydrothermal synthesis and room-temperature ferromagnetism of CeO 2 nanocolumns. Mater Lett 2013, 99:5–7.CrossRef 19. Balatti S, Larentis S, Gilmer DC, Lelmini D: Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament. Adv Mater 2013, 25:1474–1478.CrossRef 20. Wang SY, Lee DY, Huang TY, Wu JW, Tseng TY: Controllable oxygen vacancies to enhance resistive switching performance in a ZrO 2 -based RRAM with embedded Mo layer. Nanotechnol 2010, 21:495201.CrossRef 21. Geetika K, Pankaj M, Ram SK: Forming free resistive switching in graphene oxide thin film for thermally stable nonvolatile memory applications.